rating to 400 v prv surge overload rating to 30 amperes peak ideal for printed circuit board reliable low cost construction utilizing molded 94v-o maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. edb 103s edb 104s edb 105s edb 106s units maximum recurrent peak reverse voltage v rrm 150 200 300 400 v ma x imu m rms v olt a g e v rms 105 140 210 280 v maximum dc blocking voltage v dc 150 200 300 400 v maximum average forw ard output current @t a =55 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load maximum instantaneous forw ard voltage at 1.0 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a =100 ma maximum reverse recovery time (note 1) t rr ns typical junction calacitance (note 2) c j pf operating junction temperature range t j storage temperature range t stg 1.0 70 voltage range: 50 --- 400 v current: 1.0 a 35 plas tic m aterial has ul flam m ability clas s ification polarity symbols molded on body - 55 ---- + 150 - 55 ---- + 150 i r a 10.0 a 50 15 10 lead solderable per mil-std-202 method 208 i f(av) 1.0 lead: silver plated copper, solderde plated weight: 1.0 grams 100 50 edb 101s edb 102s 50 100 2 . m easure d a t 1 mh z an d app li e d reverse vo lt age o f 4 . 0 vo lt s. 1.0 30.0 i fsm note: 1. test conditions: i f =0.5a, i r =-1.0a, i rr =-0.25a. e db101s-e db106 s silicon bridge rectifiers features 1.2 0.3 0.3 1 0.1 6.3 0.2 8.3 0.3 8.3 0.1 3.2 0. 2 5 0.2 6.4 0.1 7.9 0.2 10 0.6 db- s dimensions in millimeters http://www.luguang.cn mail:lge@luguang.cn
-1.0a -0.25a 0 +0.5a t rr 1cm pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note1) (+) 25vdc (approx) (-) .01 1.0 10 04060 0.1 20 100 120 140 80 t j =25 100 t j =100 t j =150 1 0 25 50 75 100 125 150 2 0 single phaes half wave 60hz inductive load resistive or 10 20 1 10 100 8.3ms single half sine wave t j =25 40 50 30 60 0 5 50 average forward current, amperse amperse amperse characteri sti cs amperse fi g. 2 -- typical forward current derati ng curve notes: 1. rise time =7ns ma x. input impeda nce=1m .22pf 2. rise time=10ns ma x. source impeda nce=5o set time base for 10 ns /cm instantaneous forward current, instantaneous forward voltage, volts ambient temperature ( ) fig.5 -- maximum non-repetitive forward surge current fi g. 6 -- typical juncti on capaci tance number of cycles at 60hz peak forward surge current, percent of rated peak reverse voltage, (%) fi g. 4 -- typical i nstantaneous forward reverse voltage, volts fi g. 3 -- typical reverse characteri sti cs junction capacitance, (pf) instantaneous reverse current, fi g. 1 -- test circui t diagram and reverse recovery ti me characteri sti c 10 20 .1 10 100 40 100 2 200 1 4 60 4 6 1 edb105s-edb106s EDB101S-edb104s t j =25 0.8 1.0 1.2 1.4 0.1 1.0 10 t j =125 pulse width =300 u s 0. 60.4 .01 0.2 0 .001 EDB101S-edb106s silicon bridge rectifiers ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
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